| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser that has excellent temperature characteristics and can perform high-speed modulation. SOLUTION: In a semiconductor laser using a semiconductor quantum well structure on an InP substrate as an active layer, a well layer contains any of InGaAsP, InAsP, or InGaAs not containing Sb, and a barrier layer contains InGaPSb or InGaAsPSb containing Sb. Since only the barrier layer contains Sb, the band discontinuity of the valence band can be reduced, compared to a conventional material even if the band discontinuity of the conduction band is increased, so that the occurrence of a non-uniform distribution of holes and electrons in increasing the number of well layers can be avoided, thereby improving temperature characteristics and achieving high-speed modulation. COPYRIGHT: (C)2013,JPO&INPIT |
