SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD OF DETECTING TEMPERATURE

摘要

Standby time for starting a thermal process is reduced. A substrate processing apparatus includes a reaction pipe which receives a substrate support unit which supports substrates and treats the substrate supported on the substrate; a heating part which in installed in the outer part of the reaction pipe and heats the reaction pipe; a protection pipe which is installed to touch the outer wall of the reaction pipe; an insulating pipe which is arranged in the protection pipe and has an inner part which has a through hole; a thermocouple which includes an upper part where a thermocouple contact part is formed and a thermocouple element wire is inserted into the trough hole; a gas supply part which supplies a gas for treating the substrate received in the reaction pipe to the reaction pipe; and a discharging part which discharges the gas from the reaction pipe.