Lasing device with grating

摘要

A semiconductor laser device (10) emits radiation at multiple distinct wavelengths. The device (10) comprises active layer (16) having a first portion (20) and a second portion (21) The first and second portions (20, 21) being separated by a Bragg grating (19) extending through the entire depth of the active layer (16). The first portion (20) defining a first lasing cavity (29) for emitting electromagnetic radiation at a first wavelength l1 and the first and second portions (20, 21) together defining a second lasing cavity (31) for emitting electromagnetic radiation at a second wavelength l2.The active layer 16 may be a dot in well D-WELL formed by depositing 2-3 monolayers of InP material on (Al0.3Ga0.7)0.51In0.49P and covering with Ga0.51In0.49P quantum wells.