发明名称 |
QUARTZ GLASS CRUCIBLE, METHOD FOR PRODUCING SAME, AND METHOD FOR PRODUCING MONOCRYSTALLINE SILICON |
摘要 |
Described herein is a method for producing a quartz glass crucible, including the steps of: preparing a crucible base material that is made of quartz glass and has a crucible shape; producing a synthetic quartz glass material by the direct process or the soot process; processing the synthetic quartz glass material into a crucible shape without pulverizing the synthetic quartz glass material; and welding the synthetic quartz glass material processed into the crucible shape to the inner surface of the crucible base material. As a result, there are provided a quartz glass crucible that avoids generation of dislocation in a silicon single crystal, the generation of dislocation caused by the crucible itself, at the time of production of a silicon single crystal and has high heat resistance, a method for producing the quartz glass crucible, and a method for producing a silicon single crystal, the method using such a quartz glass crucible. |
申请公布号 |
KR20140039133(A) |
申请公布日期 |
2014.04.01 |
申请号 |
KR20137011096 |
申请日期 |
2011.09.26 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
KIMURA AKIHIRO;MATSUMOTO SUGURU;FUSEGAWA IZUMI;MIKI KATSUHIKO |
分类号 |
C03B20/00;C30B15/10;C30B29/06 |
主分类号 |
C03B20/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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