发明名称 |
Bonding layer structure and method for wafer to wafer bonding |
摘要 |
A structure comprises a first semiconductor substrate, a first bonding layer deposited on a bonding side the first semiconductor substrate, a second semiconductor substrate stacked on top of the first semiconductor substrate and a second bonding layer deposited on a bonding side of the second semiconductor substrate, wherein the first bonding layer is of a horizontal length greater than a horizontal length of the second semiconductor substrate, and wherein there is a gap between an edge of the second bonding layer and a corresponding edge of the second semiconductor substrate. |
申请公布号 |
US8686571(B2) |
申请公布日期 |
2014.04.01 |
申请号 |
US201213571260 |
申请日期 |
2012.08.09 |
申请人 |
HUANG HSIN-TING;PENG JUNG-HUEI;TSAI SHANG-YING;HUNG LI-MIN;HUANG YAO-TE;TENG YI-CHUAN;CHO CHIN-YI;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HUANG HSIN-TING;PENG JUNG-HUEI;TSAI SHANG-YING;HUNG LI-MIN;HUANG YAO-TE;TENG YI-CHUAN;CHO CHIN-YI |
分类号 |
H01L33/00;H01L23/48 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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