发明名称 Stacked chip assembly having vertical vias
摘要 An assembly and method of making same are provided. The assembly can be formed by stacking a first semiconductor element atop a second semiconductor element and forming an electrically conductive element extending through openings of the semiconductor elements. The openings may be staged. The conductive element can conform to contours of the interior surfaces of the openings and can electrically connect conductive pads of the semiconductor elements. A dielectric region can be provided at least substantially filling the openings of the semiconductor elements, and the electrically conductive element can extend through an opening formed in the dielectric region.
申请公布号 US8686565(B2) 申请公布日期 2014.04.01
申请号 US20100883431 申请日期 2010.09.16
申请人 OGANESIAN VAGE;HABA BELGACEM;MOHAMMED ILYAS;MITCHELL CRAIG;SAVALIA PIYUSH;TESSERA, INC. 发明人 OGANESIAN VAGE;HABA BELGACEM;MOHAMMED ILYAS;MITCHELL CRAIG;SAVALIA PIYUSH
分类号 H01L23/48;H01L21/50 主分类号 H01L23/48
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