发明名称 |
Sense scheme for phase change material content addressable memory |
摘要 |
A sensing circuit and method for sensing match lines in content addressable memory. The sensing circuit includes an inverter electrically coupled in a feedback loop to a match line. The inverter includes an inverting threshold of the match line. The match line is charged to substantially a first voltage threshold during a pre-charge phase. An evaluation phase occurs when the match line voltage drops from substantially the first voltage threshold to substantially the second voltage threshold. |
申请公布号 |
US8687398(B2) |
申请公布日期 |
2014.04.01 |
申请号 |
US201213407813 |
申请日期 |
2012.02.29 |
申请人 |
CHANG LELAND;LAM CHUNG H.;LI JING;MONTOYE ROBERT K.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHANG LELAND;LAM CHUNG H.;LI JING;MONTOYE ROBERT K. |
分类号 |
G11C15/00 |
主分类号 |
G11C15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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