发明名称 |
Compliant monopolar micro device transfer head with silicon electrode |
摘要 |
A compliant monopolar micro device transfer head array and method of forming a compliant monopolar micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array including a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect, and each silicon electrode is deflectable into a cavity between the base substrate and the silicon electrode. A dielectric layer covers a top surface of each mesa structure. |
申请公布号 |
US8686542(B2) |
申请公布日期 |
2014.04.01 |
申请号 |
US201313828117 |
申请日期 |
2013.03.14 |
申请人 |
LUXVUE TECHNOLOGY CORPORATION |
发明人 |
GOLDA DARIUSZ;BIBL ANDREAS |
分类号 |
H04L21/00 |
主分类号 |
H04L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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