发明名称 |
LED with improved injection efficiency |
摘要 |
A light emitting device and method for making the same is disclosed. The light-emitting device includes an active layer sandwiched between a p-type semiconductor layer and an n-type semiconductor layer. The active layer emits light when holes from the p-type semiconductor layer combine with electrons from the n-type semiconductor layer therein. The active layer includes a number of sub-layers and has a plurality of pits in which the side surfaces of a plurality of the sub-layers are in contact with the p-type semiconductor material such that holes from the p-type semiconductor material are injected into those sub-layers through the exposed side surfaces without passing through another sub-layer. The pits can be formed by utilizing dislocations in the n-type semiconductor layer and etching the active layer using an etching atmosphere in the same chamber used to deposit the semiconductor layers without removing the partially fabricated device. |
申请公布号 |
US8684749(B2) |
申请公布日期 |
2014.04.01 |
申请号 |
US201313959297 |
申请日期 |
2013.08.05 |
申请人 |
TOSHIBA TECHNO CENTER INC. |
发明人 |
LESTER STEVEN;RAMER JEFF;WU JUN;ZHANG LING |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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