发明名称 |
Silicon carbide semiconductor device |
摘要 |
A silicon carbide layer is epitaxially formed on a main surface of a substrate. The silicon carbide layer is provided with a trench having a side wall inclined relative to the main surface. The side wall has an off angle of not less than 50° and not more than 65° relative to a {0001} plane. A gate insulating film is provided on the side wall of the silicon carbide layer. The silicon carbide layer includes: a body region having a first conductivity type and facing a gate electrode with the gate insulating film being interposed therebetween; and a pair of regions separated from each other by the body region and having a second conductivity type. The body region has an impurity density of 5×1016 cm−3 or greater. This allows for an increased degree of freedom in setting a threshold voltage while suppressing decrease of channel mobility. |
申请公布号 |
US8686435(B2) |
申请公布日期 |
2014.04.01 |
申请号 |
US201213434233 |
申请日期 |
2012.03.29 |
申请人 |
MASUDA TAKEYOSHI;HIYOSHI TORU;WADA KEIJI;SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
MASUDA TAKEYOSHI;HIYOSHI TORU;WADA KEIJI |
分类号 |
H01L21/336;H01L29/04;H01L29/12;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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