发明名称 |
Silicon carbide semiconductor element |
摘要 |
This silicon carbide semiconductor element includes: a body region of a second conductivity type which is located on a drift layer of a first conductivity type; an impurity region of the first conductivity type which is located on the body region; a trench which runs through the body region and the impurity region to reach the drift layer; a gate insulating film which is arranged on surfaces of the trench; and a gate electrode which is arranged on the gate insulating film. The surfaces of the trench include a first side surface and a second side surface which is opposed to the first side surface. The concentration of a dopant of the second conductivity type is higher at least locally in a portion of the body region which is located beside the first side surface than in another portion of the body region which is located beside the second side surface. |
申请公布号 |
US8686439(B2) |
申请公布日期 |
2014.04.01 |
申请号 |
US201213816571 |
申请日期 |
2012.06.25 |
申请人 |
TAKAHASHI KUNIMASA;NIWAYAMA MASAHIKO;UCHIDA MASAO;KUDOU CHIAKI;PANASONIC CORPORATION |
发明人 |
TAKAHASHI KUNIMASA;NIWAYAMA MASAHIKO;UCHIDA MASAO;KUDOU CHIAKI |
分类号 |
H01L31/0312 |
主分类号 |
H01L31/0312 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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