发明名称 |
Nonvolatile memory cell comprising a diode and a resistance-switching material |
摘要 |
A method is provided for programming a memory cell in a memory array. The memory cell includes a resistivity-switching layer of a metal oxide or nitride compound, and the metal oxide or nitride compound includes exactly one metal. The method includes programming the memory cell by changing the resistivity-switching layer from a first resistivity state to a second programmed resistivity state, wherein the second programmed resistivity state stores a data state of the memory cell. Numerous other aspects are provided. |
申请公布号 |
US8687410(B2) |
申请公布日期 |
2014.04.01 |
申请号 |
US201313734536 |
申请日期 |
2013.01.04 |
申请人 |
SANDISK 3D LLC |
发明人 |
HERNER SCOTT BRAD;PETTI CHRISTOPHER J.;KUMAR TANMAY |
分类号 |
G11C11/00;G11C5/02;G11C5/06 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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