| 发明名称 |
Schottky diode integrated into LDMOS |
| 摘要 |
In an LDMOS device leakage and forward conduction parameters are adjusted by integrating an Schottky diode into the LDMOS by substituting one or more n+ source regions with Schottky diodes. |
| 申请公布号 |
US8686502(B2) |
申请公布日期 |
2014.04.01 |
| 申请号 |
US201314015029 |
申请日期 |
2013.08.30 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
RAGHAVAN VENKAT;STRACHAN ANDREW D. |
| 分类号 |
H01L27/06 |
主分类号 |
H01L27/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
