发明名称 CMOS image sensor
摘要 A CIS and a method of manufacturing the same, the CIS including a substrate having a first surface and second surface opposite thereto, the substrate including an APS array region including a photoelectric transformation element and a peripheral circuit region; an insulating interlayer on the first surface of the substrate and including metal wirings electrically connected to the photoelectric transformation element; a light blocking layer on the peripheral circuit region of the second surface of the substrate, exposing the APS array region, and including a plurality of metal wiring patterns spaced apart from one another to form at least one drainage path along a boundary region between the APS array region and the peripheral circuit region; a color filter layer on the second surface of the substrate covering the APS array region and the light blocking layer; and a microlens on the color filter layer on the APS array region.
申请公布号 US8686482(B2) 申请公布日期 2014.04.01
申请号 US20100940410 申请日期 2010.11.05
申请人 LEE YUN-KI;SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE YUN-KI
分类号 H01L31/113 主分类号 H01L31/113
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