发明名称 |
ULTRATOUGH CVD SINGLE CRYSTAL DIAMOND AND THREE DIMENSIONAL GROWTH THEREOF |
摘要 |
The invention relates to a single-crystal diamond grown by microwave plasma chemical vapor deposition that has a toughness of at least about 30 MPa m1/2.The invention also relates to a method of producing a single-crystal diamond with a toughness of at least about 30 MPa m1/2.The invention further relates to a process for producing a single crystal CVD diamond in three dimensions on a single crystal diamond substrate. |
申请公布号 |
CA2589299(C) |
申请公布日期 |
2014.04.01 |
申请号 |
CA20052589299 |
申请日期 |
2005.09.09 |
申请人 |
CARNEGIE INSTITUTION OF WASHINGTON |
发明人 |
HEMLEY, RUSSELL J.;MAO, HO-KWANG;YAN, CHIH-SHIUE |
分类号 |
C01B31/06;C30B25/00;C30B29/04 |
主分类号 |
C01B31/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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