摘要 |
A method for growth and fabrication of semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga, Al, In, B)N template or nucleation layer on the substrate, and growing the semipolar (Ga, Al, In, B)N thin films, heterostructures or devices on the planar semipolar (Ga, Al, In, B)N template or nucleation layer. The method results in a large area of the semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices being parallel to the substrate surface. |
申请人 |
FARRELL, JR. ROBERT M.;BAKER TROY J.;CHAKRABORTY ARPAN;HASKELL BENJAMIN A.;PATTISON P. MORGAN;SHARMA RAJAT;MISHRA UMESH K.;DENBAARS STEVEN P.;SPECK JAMES S.;NAKAMURA SHUJI;THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;JAPAN SCIENCE AND TECHNOLOGY AGENCY |
发明人 |
FARRELL, JR. ROBERT M.;BAKER TROY J.;CHAKRABORTY ARPAN;HASKELL BENJAMIN A.;PATTISON P. MORGAN;SHARMA RAJAT;MISHRA UMESH K.;DENBAARS STEVEN P.;SPECK JAMES S.;NAKAMURA SHUJI |