发明名称 Semiconductor device and method for driving the same
摘要 A semiconductor device includes: a first driving voltage generation unit configured to generate a first driving voltage; a fuse unit coupled between an output node for receiving the first driving voltage and a fuse state sensing node; a driving unit configured to drive the fuse state sensing node with a second driving voltage in response to a control signal; a voltage level control unit configured to generate a voltage level control signal in response to a fuse state sensing signal that corresponds to a voltage level of the fuse state sensing node; and a second driving voltage generation unit configured to control and output a voltage level of the second driving voltage in response to the voltage level control signal. The semiconductor device repeatedly performs a rupture operation by monitoring a fuse state sensing signal.
申请公布号 US8686786(B2) 申请公布日期 2014.04.01
申请号 US201213588795 申请日期 2012.08.17
申请人 PARK MUN-PHIL;LEE JUNG-HWAN;SK HYNIX INC. 发明人 PARK MUN-PHIL;LEE JUNG-HWAN
分类号 H01H37/76 主分类号 H01H37/76
代理机构 代理人
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