发明名称 |
Semiconductor device and method for driving the same |
摘要 |
A semiconductor device includes: a first driving voltage generation unit configured to generate a first driving voltage; a fuse unit coupled between an output node for receiving the first driving voltage and a fuse state sensing node; a driving unit configured to drive the fuse state sensing node with a second driving voltage in response to a control signal; a voltage level control unit configured to generate a voltage level control signal in response to a fuse state sensing signal that corresponds to a voltage level of the fuse state sensing node; and a second driving voltage generation unit configured to control and output a voltage level of the second driving voltage in response to the voltage level control signal. The semiconductor device repeatedly performs a rupture operation by monitoring a fuse state sensing signal. |
申请公布号 |
US8686786(B2) |
申请公布日期 |
2014.04.01 |
申请号 |
US201213588795 |
申请日期 |
2012.08.17 |
申请人 |
PARK MUN-PHIL;LEE JUNG-HWAN;SK HYNIX INC. |
发明人 |
PARK MUN-PHIL;LEE JUNG-HWAN |
分类号 |
H01H37/76 |
主分类号 |
H01H37/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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