发明名称 |
Electronic device and method of biasing |
摘要 |
A first bias charge is provided to first bias region at a first level of an electronic device, the first bias region directly underlying a first transistor having a channel region at a second level that is electrically isolated from the first bias region. A voltage threshold of the first transistor is based upon the first bias charge. A second bias charge is provided to second bias region at the first level of an electronic device, the second bias region directly underlying a second transistor having a channel region at a second level that is electrically isolated from the first bias region. A voltage threshold of the second transistor is based upon the second bias charge. |
申请公布号 |
US8687417(B2) |
申请公布日期 |
2014.04.01 |
申请号 |
US20070867743 |
申请日期 |
2007.10.05 |
申请人 |
LI RUIGANG;ZHOU JINGRONG;WU DAVID DONGGANG;SHI ZHONGHAI;BULLER JAMES F.;SULTAN AKIF;HAUSE FRED;MICHAEL DONNA;GLOBALFOUNDRIES INC. |
发明人 |
LI RUIGANG;ZHOU JINGRONG;WU DAVID DONGGANG;SHI ZHONGHAI;BULLER JAMES F.;MICHAEL MARK W.;SULTAN AKIF;HAUSE FRED |
分类号 |
G11C11/34;G11C16/00;G11C16/02;G11C16/04 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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