发明名称 |
Semiconductor device comprising semiconductor substrate and having diode region and IGBT region |
摘要 |
A semiconductor device includes a semiconductor substrate in which a diode region and an IGBT region are formed, wherein a lower surface side of the semiconductor substrate comprises a low impurity region provided between a second conductivity type cathode region of the diode region and a first conductivity type collector region of the IGBT region. The low impurity region includes at least one of a first conductivity type first low impurity region which has a lower density of first conductivity type impurities than that in the collector region and a second conductivity type second low impurity region which has a lower density of second conductivity type impurities than that in the cathode region. |
申请公布号 |
US8686467(B2) |
申请公布日期 |
2014.04.01 |
申请号 |
US201213609868 |
申请日期 |
2012.09.11 |
申请人 |
IWASAKI SHINYA;SOENO AKITAKA;TOYOTA JIDOSHA KABUSHIKI KAISHA |
发明人 |
IWASAKI SHINYA;SOENO AKITAKA |
分类号 |
H01L29/739;H01L21/331 |
主分类号 |
H01L29/739 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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