| 摘要 |
The PCRAM device includes a semiconductor substrate including a switching device; an interlayer insulating layer having a heating electrode contact hole exposing the switching device, a heating electrode formed to be extended along a side of the interlayer insulating layer in the heating electrode contact hole, wherein the heating electrode has a width gradually increased toward a bottom of the heating electrode and is in contact with the switching device, first and second phase-change layers formed within the heating electrode contact hole that includes the heating electrode, and a phase-change separation layer formed in the heating electrode contact hole between the first and second phase-change layers. |
