SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

摘要

A method of manufacturing a semiconductor device is provided. A gate electrode is formed on a substrate. A first spacer, a second spacer, a third spacer are successively formed on the sidewall of the gate electrode. A recess region is formed by etching the substrate. A compressive stress pattern is formed in the recess region. A protection spacer is formed on the sidewall of the third spacer. When the recess region is formed, the lower part of the second spacer is removed to form a gap region between the first spacer and the third spacer. The protection spacer fills the gap region.