SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

摘要

A semiconductor device and a method of manufacturing the same are provided. The device includes a gate pattern arranged on a semiconductor substrate, a bulk epitaxial pattern which fills a recess region formed in the semiconductor substrate of one side of the gate pattern and an upper tilt surface among {111} crystalline surfaces, an insert epitaxial pattern which is arranged on the bulk epitaxial pattern and includes a specific element for promoting a growth rate on the upper tilt surface, and a capping epitaxial pattern which is arranged on the insert epitaxial pattern.