METHODS OF FORMING TRANSISTORS AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES INCLUDING THE SAME

摘要

In a transistor forming method, a trench is formed by partially removing the top of a substrate. An element separating film including a void on the top is formed in the trench to define an active pattern on the substrate. A photoresist pattern is formed on the active pattern and the element separating film. A recess is formed by partially removing the element separating film and the active pattern by using the photoresist pattern as an etch mask. The void is embedded and the pattern is removed by performing a plasma processing process. A gate insulating film and a gate electrode embedding the recess are formed. [Reference numerals] (AA) Two-dimensional barcode; (BB) Recognize an image code; (CC) Confirmed; (DD) End