| 摘要 |
PURPOSE: A semiconductor device is provided to easily control the color of mixed light by forming a plurality of multiple quantum well layers for emitting blue light. CONSTITUTION: A multiple quantum well layer (22a) for emitting red light includes an n-type GaN layer, a GaInN quantum well layer, and a GaN clad layer. A multiple quantum well layer (22b) for emitting green light is formed on the multiple quantum well layer for emitting the red light and includes a 3C-SiC quantum well layer and a GaN clad layer. A multiple quantum well layer (22c) for emitting blue light is formed on the multiple quantum well layer for emitting the green light and includes a GaAIN quantum well layer and the GaN clad layer. A p-type GaN layer (23) is formed on the multiple quantum well layer for emitting the blue light. |
