摘要 |
A photoresist monomer containing a photoacid generator, a photoresist polymer of the monomer, a photoresist composition containing the polymer, and a method for forming a photoresist pattern by using the composition are provided to reduce the generation of gas during exposure, to distribute an acid uniformly in photoresist and to improve the energy sensitivity to light source and thermal stability. A photoresist monomer containing a photoacid generator is represented by the formula 1, wherein R* are independently H, a methyl group or a CF3; R is a C1-C6 linear, branched or cyclic hydrocarbon group; R1, R2 and R3 are independently a C1-C10 hydrocarbon group; X is S or I; R3 is not present if X is I; and n is an integer of 0-6. |