| 摘要 |
According to one embodiment of present invention a semiconductor integrated circuit comprises a first power terminal, a second power terminal, a regulator circuit, an ESD protection circuit and a level shift circuit. First voltage is applied to the first power terminal. Second voltage, which is different from the first voltage, is applied to the second power terminal. The regulator circuit adjusts the second voltage and outputs the adjusted second voltage to an output terminal as output voltage. The ESD protection circuit discharges ESD generated at the output terminal. A level shift circuit outputs a first control signal electrically separating the regulator circuit and the ESD protection circuit according to the appliance of the first and second voltages and level-shifts the size of the first voltage into the size of the second voltage. [Reference numerals] (1) Level shift circuit; (2) Regulator circuit; (200) Operation circuit; (6) ESD protection circuit |
