METHOD OF MANUFACTURING FOR SEMICONDUCTOR DEVICE USING EXPANDABLE MATERIAL

摘要

Provided is a method of manufacturing a semiconductor device which improves the density of a gap-fill insulating layer by using an expandable material. The method of manufacturing the semiconductor device includes forming a gate insulating layer on a substrate, forming a first and a second gate structure on the gate insulating layer, forming an expandable material on the first and the second gate structures, forming a gap-fill insulating layer between the expandable material and the first and the second gate structures, and performing a thermal process by increasing the volume of the expandable material.