发明名称 |
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME |
摘要 |
A method for forming a semiconductor structure and a method for patterning a dielectric layer are provided. The method comprises following steps. An upper cap layer is formed on and physically contacted with a dielectric layer. The dielectric layer has a dielectric thickness having a range of 1000Ř5000Å. A patterned mask layer is formed on and physically contacted with the upper cap layer. A part of the upper cap layer is removed to form a patterned upper cap layer by using the patterned mask layer as an etching mask. A part of the dielectric layer is removed to form a dielectric opening in the dielectric layer by using the patterned upper cap layer as an etching mask. |
申请公布号 |
US2014087559(A1) |
申请公布日期 |
2014.03.27 |
申请号 |
US201213628125 |
申请日期 |
2012.09.27 |
申请人 |
SHEN XU-YANG;LIAU SENG-WAH;ZHANG JIAN-JUN;FANG HAN-CHUAN;UNITED MICROELECTRONICS CORP. |
发明人 |
SHEN XU-YANG;LIAU SENG-WAH;ZHANG JIAN-JUN;FANG HAN-CHUAN |
分类号 |
H01L21/302;H01L21/768 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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