发明名称 |
Semiconductor Devices Having Back Side Bonding Structures |
摘要 |
Semiconductor devices are provided including an internal circuit on a front side of a substrate, the substrate defining a through-silicon via (TSV) structure extending vertically therein; a back side insulating layer on a back side of the substrate; and a back side bonding structure on the back side insulating layer. The TSV structure includes a front side end on a front side of the substrate and contacts the internal circuit and a back side end extending toward a back side of the substrate. The back side bonding structure includes a back side bonding interconnection portion on the back side insulating layer defining a back side bonding via hole therein and a back side bonding via plug portion in the contact plug hole in the back side insulating layer connected to a back side end of the TSV structure. |
申请公布号 |
US2014084375(A1) |
申请公布日期 |
2014.03.27 |
申请号 |
US201313957018 |
申请日期 |
2013.08.01 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE WOON-SEOB;KANG SIN-WOO;PARK YEONG-LYEOL;KIM JANG-HO;YUN KI-YOUNG |
分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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