发明名称 |
METHOD OF GROWING GROUP III NITRIDE CRYSTALS |
摘要 |
The present invention provides a method of growing an ingot of group III nitride. Group III nitride crystals such as GaN are grown by the ammonothermal method on both sides of a seed to form an ingot and the ingot is sliced into wafers. The wafer including the first-generation seed is sliced thicker than the other wafers so that the wafer including the first-generation seed does not break. The wafer including the first-generation seed crystal can be used as a seed for the next ammonothermal growth. |
申请公布号 |
US2014087113(A1) |
申请公布日期 |
2014.03.27 |
申请号 |
US201313834015 |
申请日期 |
2013.03.15 |
申请人 |
SEOUL SEMICONDUCTOR CO., LTD.;SIXPOINT MATERIALS, INC. |
发明人 |
HASHIMOTO TADAO;LETTS EDWARD;HOFF SIERRA |
分类号 |
H01L29/20;C30B7/10;C30B29/40 |
主分类号 |
H01L29/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|