INTEGRATED DIELECTRIC WAVEGUIDE AND SEMICONDUCTOR LAYER AND METHOD THEREFOR
摘要
<p>A method for realizing a semiconductor waveguide and an ultra-low-loss dielectric waveguide disposed on the same substrate (210) is disclosed. The method includes forming a partial dielectric waveguide structure on the substrate (210), wherein the dielectric waveguide is annealed to reduce hydrogen incorporation, and wherein the top cladding of the dielectric waveguide is only partially formed by a first dielectric layer (216). A second substrate (414) comprising a semiconductor layer having a second dielectric layer (218) disposed on its top surface is bonded to the first substrate such that the first and second dielectric layers collectively form the complete top cladding (222) for the dielectric waveguide. The second substrate (414) is then removed and the semiconductor layer is patterned to define the semiconductor waveguide core.</p>
申请公布号
WO2014047443(A1)
申请公布日期
2014.03.27
申请号
WO2013US60927
申请日期
2013.09.20
申请人
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
发明人
BAUTERS, JARED;BOWERS, JOHN, E.;BOVINGTON, JOCK;HECK, MARTIJN;DAVENPORT, MICHAEL;BLUMENTHAI, DANIEL;BARTON, JON