METHOD FOR PRODUCING GROUP III-V COMPOUND CRYSTAL, METHOD FOR PRODUCING SEED CRYSTALS FORMED SUBSTRATE, GROUP III-V COMPOUND CRYSTAL, SEMICONDUCTOR DEVICE, GROUP III-V COMPOUND CRYSTAL PRODUCING APPARATUS, SEED CRYSTALS FORMED SUBSTRATE PRODUCING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a group III-V compound crystal that may produce a large size group III-V compound crystal having few defects efficiently.SOLUTION: A method for producing a group III-V compound crystal 13 comprising: a seed crystals formed substrate providing step for providing a seed crystals formed substrate obtained by forming a plurality of group III-V compound seed crystals 12a on a substrate 11; a contact step for contacting the surface of the seed crystals 12a to a metal melt; and a crystal growth step for forming and growing a group III-V compound crystal 13 by reacting a group III element and a group V element in the metal melt using the seed crystals 12a as nuclei in which a plurality of the group III-V compound crystals grown from a plurality of the seed crystals 12a are joined by the growth of the group III-V compound crystal, in which a plurality of the seed crystals 12a are formed by removing a part of a group III-V compound layer 12 formed on the substrate 11 by a physical processing.