| 摘要 |
An integrated circuit, e.g. an OTP or MTP memory circuit, comprises an access transistor (10) and an antifuse (102). The access transistor includes at least one source/drain region (106, 08), and the antifuse has a conductor-insulator-conductor structure. The antifuse includes a first conductor that acts as a first electrode (134), and also includes an antifuse dielectric (136), and a second conductor (114, 304). A first surface of the first electrode is coupled to a first surface of the antifuse dielectric, a second surface of the antifuse dielectric is coupled to a first surface of the second conductor. The second conductor is electrically coupled to the access transistor's source/ drain region. The antifuse is adapted to transition from an open circuit state to a closed circuit state if a programming voltage Vpp greater than or equal to an antifuse dielectric breakdown voltage is applied between the first electrode and the second conductor. A resistor (202) can also be provided and is formed from the same layer as the first electrode (134) of the antifuse. The resistor is located on an insulating layer (204) that is made from the same layer as the antifuse dielectric, |
