| 摘要 |
A semiconductor device which makes it possible to reduce a wasteful standby time at power-on is provided. In this semiconductor device, a reset of an internal circuit is canceled as described below. When a data signal stored in a storage section is at“0,”the reset is canceled by bringing an internal reset signal to the“H”level when a relatively short time has passed after the rising edge of a power on reset signal. When the data signal is at“1,”the reset is canceled by bringing the internal reset signal to the“H”level when a relatively long time has passed after the rising edge of the power on reset signal. Therefore, a wasteful standby time at power-on can be reduced by writing the data signal logically equivalent to the rise time of supply voltage to the storage section. |
