发明名称 Adhesion Promoter Apparatus and Method
摘要 A structure comprises a substrate having a plateau region and a trench region, a reflecting layer formed over a top surface of the trench region, a first adhesion promoter layer formed over the reflecting layer, a bottom cladding layer deposited over the first adhesion promoter layer, a core layer formed over the bottom cladding layer and a top cladding layer formed over the core layer.
申请公布号 US2014084421(A1) 申请公布日期 2014.03.27
申请号 US201213628927 申请日期 2012.09.27
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 TSENG CHUN-HAO;KUO YING-HAO;CHENG KAI-FENG;CHEN HAI-CHING;BAO TIEN-I
分类号 H01L21/56;H01L29/06 主分类号 H01L21/56
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