| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist protective film material having effects of reducing influences of an environment on a resist film, efficiently blocking OOB (out-of-band) light, as well as decreasing film reduction in a resist pattern or generation of a bridge between patterns, enhancing sensitivity of a resist film and suppressing generation of outgas from a resist film, and to provide a pattern forming method using the above material.SOLUTION: The resist protective film material is used in a pattern forming process by lithography, in which a protective film comprising the resist protective film material is formed on a photoresist layer formed on a wafer, the resist layer is exposed and then developed; and the resist protective film material comprises a polymeric compound as a base resin having a repeating unit derived from a specified monomer having a 1,1,1,3,3,3-hexafluoro-2-propanol group as well as a repeating unit derived from one or more monomers selected from styrenes, vinylnaphthalenes, indenes, benzofurans, benzothiophenes, stilbenes, styrylnaphthalenes and dinaphthylethylenes. The above material can prevent formation of a T-shaped profile of a resist pattern due to amine contamination in air, and has a sensitizing effect on a resist film to increase sensitivity of the resist film. |
