| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element in which a current is sufficiently diffused in a light-emitting surface of a semiconductor layer, and a method of manufacturing the same.SOLUTION: A light-emitting element 100 includes a substrate 110, an n-type layer 120, a light-emitting layer 130, a p-type layer 140, a transparent conductive metal oxide film 150, an insulating layer 160, a wiring electrode 170, an insulating film 180, an n-pad electrode N1, and a p-pad electrode P1. The transparent conductive metal oxide film 150 is a single-layer film. The transparent conductive metal oxide film 150 has a low oxygen concentration region L1 and a high oxygen concentration region H1. The high oxygen concentration region H1 is higher in oxygen concentration than the low oxygen concentration region L1. |
