GAS SUPPLY METHOD AND PLASMA PROCESSING DEVICE

摘要

In the present invention, a gas supply method includes a selecting step and an added-gas supply step. The selecting step involves selecting, in accordance with the type of film to be processed, a combination of a gas chamber into which added gas is supplied and the type of added gas, the gas chamber being selected from a plurality of gas chambers obtained by partitioning a gas introduction section for introducing a plasma-processing gas in a processing chamber in which a substrate on which the film is formed is disposed. In the added gas supply step, the added gas is supplied to the gas chamber on the basis of the combination selected in the selecting step.