发明名称 METHOD FOR FORMING PATTERN AND METHOD FOR PRODUCING ORIGINAL LITHOGRAPHY MASK
摘要 A method forming a pattern includes a process in which self-assembly material is formed on the substrate where on which a fiducial mark is formed, and the self-assembly material is separated in micro phase to form a self-assembled pattern. The position error from a predetermined formation position of the self-assembled pattern is measured on the basis of the fiducial mark, and a pattern for an alignment as well as a peripheral circuit pattern are formed on the substrate. The formation position of at least one pattern among the pattern for alignment and peripheral circuit pattern is corrected using the position error.
申请公布号 US2014087291(A1) 申请公布日期 2014.03.27
申请号 US201313784654 申请日期 2013.03.04
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 TANIGUCHI RIKIYA;SAKURAI HIDEAKI;ITO SHINICHI
分类号 G03F1/70 主分类号 G03F1/70
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