发明名称 |
THIN FILM TRANSISTOR AND MANUFACTURING METHOD OF THE SAME, AND ELECTRONIC APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor which can improve reliability and a manufacturing method of the thin film transistor; and provide an electronic apparatus.SOLUTION: A thin film transistor comprises a source electrode and a drain electrode which are formed on an organic semiconductor layer, in which an upper end of a channel region of the organic semiconductor layer between the source electrode and the drain electrode includes discontinuous regions having at least two kinds of material compositions different from each other. |
申请公布号 |
JP2014056955(A) |
申请公布日期 |
2014.03.27 |
申请号 |
JP20120201314 |
申请日期 |
2012.09.13 |
申请人 |
SONY CORP |
发明人 |
KATSUHARA MAO;ONO HIDEKI;USHIKURA SHINICHI;ISHII YUI |
分类号 |
H01L29/786;G02F1/1368;G09F9/30;H01L21/336;H01L51/05;H01L51/30;H01L51/40 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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