发明名称 THIN FILM TRANSISTOR AND MANUFACTURING METHOD OF THE SAME, AND ELECTRONIC APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a thin film transistor which can improve reliability and a manufacturing method of the thin film transistor; and provide an electronic apparatus.SOLUTION: A thin film transistor comprises a source electrode and a drain electrode which are formed on an organic semiconductor layer, in which an upper end of a channel region of the organic semiconductor layer between the source electrode and the drain electrode includes discontinuous regions having at least two kinds of material compositions different from each other.
申请公布号 JP2014056955(A) 申请公布日期 2014.03.27
申请号 JP20120201314 申请日期 2012.09.13
申请人 SONY CORP 发明人 KATSUHARA MAO;ONO HIDEKI;USHIKURA SHINICHI;ISHII YUI
分类号 H01L29/786;G02F1/1368;G09F9/30;H01L21/336;H01L51/05;H01L51/30;H01L51/40 主分类号 H01L29/786
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