| 摘要 |
A semiconductor memory device includes a block array having an m number of memory blocks in a row direction and an n number of memory blocks in a column direction (m being an integer of 2 or more and n being an integer of 1 or more), a page selection circuit configured to select a row in the block array as a page to be selected, and a page buffer configured to store data to be written in a page selected by the page selection circuit or data read from the page. Each of the memory blocks includes a memory cell array having a plurality of memory cells, a row selection circuit configured to select a row of the memory cell array, and a column selection circuit configured to select a column of the memory cell array. |
