| 摘要 |
A thin film transistor including an active layer, and has a field-effect mobility of 25 cm2/Vs or more, the active layer being formed of an oxide that includes In, Ga, and Zn in an atomic ratio that falls within the following region 1, region 2, or region 3, the region 1 being defined by 0.58≰In/(In+Ga+Zn)≰0.68 and 0.15<Ga/(In+Ga+Zn)≰0.29, the region 2 being defined by 0.45≰In/(In+Ga+Zn)<0.58 and 0.09≰Ga/(In+Ga+Zn)<0.20, and the region 3 being defined by 0.45≰In/(In+Ga+Zn)<0.58 and 0.20≰Ga/(In+Ga+Zn)≰0.27. |
