METHOD OF MANUFACTURING OF VERTICAL NON-VOLATILE MEMORY DEVICE

摘要

A method for manufacturing a vertical non-volatile memory device comprises a step for alternatively forming sacrificial films and insulating films on a substrate; a step for forming a channel opening unit in which an upper surface of the substrate is exposed by penetrating the sacrificial films and the insulating films; a step for forming a first semiconductor pattern which covers a part of inner wall of the channel opening unit; a step for forming a buried insulting pattern which fills the inner wall of the first semiconductor pattern in the channel opening unit; a step for forming a second semiconductor pattern which completely fills the channel opening unit on the buried insulating pattern; a step for injecting first conductive impurities to the first semiconductor pattern; and a step for forming a third semiconductor pattern by melting the first semiconductor pattern which is adjacent to the top sacrificial film.