| 摘要 |
The present invention includes a first semiconductor layer, an activating layer located on the first semiconductor layer to emit light, and a second semiconductor layer located on the activating layer, wherein at least one semiconductor layer among the first semiconductor layer and the second semiconductor layer includes an ALxGaNy. The present invention relates to a light emitting device having at least 40% of a ratio of GaN to Al and transmitting light having a wavelength of less than and equal to 300nm. |
