| 摘要 |
A power module semiconductor device (2) includes: an insulating substrate (10); a first pattern (10a)(D) provided on the insulating substrate (10); a semiconductor device (Q) provided on the first pattern; electric power system terminals (ST·DT) and signal system terminals (CS·G·SS) that are connected electrically with the semiconductor device; and a resin layer (12) that covers the semiconductor device and the insulating substrate. The signal system terminals are arranged so as to extend in a direction perpendicular to the principal surface of the insulating substrate. Thus, provided is a vertical-terminal, transfer-mold power module semiconductor device that has a simple structure, includes a smaller number of components, and can be space-saving. |
