| 摘要 |
Provided is a semiconductor device having two level shift circuits, for setting and for resetting, capable of preventing incorrect operation of an other-phase high-side drive circuit when a load voltage surge is applied, and a power conversion apparatus using the device. In a semiconductor device (100) such as a three-phase one-chip gate driver IC, an HVNMOS (28) configured of the two level shift circuits (6), (7) for setting and for resetting is positioned on non-opposing surfaces (11), (12), whereby the flow of electrons flowing into a drain (26) of the other-phase HVNMOS (28) due to a load voltage surge can be reduced. Further, by setting each of the distances (K1) and (K2) from the opposing surface (9) on the facing side to the drain (26) of the HVNMOS (28) configured of the two level shift circuits (6), (7) for setting and for resetting to at least 150 µm, incorrect operation can be prevented in the other-phase high-side drive circuit to which the load surge is not applied. |
