发明名称 |
SEMICONDUCTOR DEVICES WITH SILICON-GERMANIUM CHANNELS INCLUDING HYDROGEN |
摘要 |
A semiconductor device is fabricated by providing a substrate including a silicon channel layer and a silicon-germanium channel layer, forming gate structures disposed on the silicon channel layer and on the silicon-germanium channel layer, forming a first protection layer to cover the resultant structure including the gate structures, and injecting hydrogen and/or its isotopes into the silicon-germanium channel layer. The silicon and silicon-germanium channel layers may be oriented along a <100> direction. Related devices are also described. |
申请公布号 |
US2014084379(A1) |
申请公布日期 |
2014.03.27 |
申请号 |
US201314092016 |
申请日期 |
2013.11.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JEONG YONGKUK;YU HYUN-KWAN;KIM KIEUN |
分类号 |
H01L27/092 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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