| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which forward voltage drop of a FWD (Free Wheel Diode) has a positive temperature coefficient and a reverse recovery operation exhibits soft recovery characteristics and resistance against breakdown by Joule heat is improved; and provide a manufacturing method of the semiconductor device.SOLUTION: An FWD comprises: an active part including a first short-lifetime region on a p-type anode layer side with respect to a depth direction, and a first long lifetime region on an n-type cathode layer side; an edge termination structure including a second short lifetime region having lifetime shorter than lifetime of the first long lifetime region in the active part; and a second long lifetime region which is formed by extension and projection of the first long lifetime region in the active part toward the edge termination structure side and which is arranged in the edge termination structure on the n-type cathode layer side. |
