发明名称 REACTION TUBE, SUBSTRATE PROCESSING DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a reaction tube which inhibits gas uniformity defects of a TOP region of the reaction tube and thereby improves gas flow and uniformity in a surface of each substrate or between surfaces of the substrates, and to provide a substrate processing device and a manufacturing method of a semiconductor device.SOLUTION: A cylindrical reaction tube houses multiple substrates in a lamination manner and includes a cylindrical part and a ceiling part which is provided so as to cover an upper surface of the cylindrical part. An inner shape of the ceiling part is substantially flat. The maximum diameter of an outer shape of the ceiling part is larger than the maximum diameter of an outer shape of the cylindrical part.
申请公布号 JP2014056961(A) 申请公布日期 2014.03.27
申请号 JP20120201429 申请日期 2012.09.13
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 OKADA ITARU;TAKAGI YASUHIRO;KAGA YUKINAO
分类号 H01L21/31;C23C16/455 主分类号 H01L21/31
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