发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a display device which has a thin-film transistor having high electrical characteristics and high reliability, and a method of manufacturing the same.SOLUTION: A semiconductor device is provided with: a gate electrode; a gate insulating film provided on the gate electrode; a first semiconductor layer provided on the gate insulating film and having a microcrystalline semiconductor; a second semiconductor layer provided on the first semiconductor layer and having an amorphous semiconductor; and a source region and a drain region provided on the second semiconductor layer. The first semiconductor layer has higher crystallinity than the second semiconductor layer. The second semiconductor layer is provided with an impurity region having a conductivity type different from that of the source region and the drain region between the source region and the drain region. |
申请公布号 |
JP2014057080(A) |
申请公布日期 |
2014.03.27 |
申请号 |
JP20130216941 |
申请日期 |
2013.10.18 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
KOBAYASHI SATOSHI;KUROKAWA YOSHIMOTO;YAMAZAKI SHUNPEI;KAWAE DAISUKE |
分类号 |
H01L29/786;G02F1/1368;H01L21/28;H01L29/41;H01L51/50;H05B33/14 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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